MSP120N08G MSP120N08G 80V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced technology.
which provides high performance in on-state resistance, fast switching performance and excellent quality.
MSP120N08G suitable device forSynchronous Rectification For Server and general purpose applications.
Features - 120A, 80V, RDS(TYP) = 5.
5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Curre...

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