Part Number
|
FKH3018B |
Manufacturer
|
FETek |
Description
|
N-Channel MOSFET |
Published
|
Jan 4, 2019 |
Detailed Description
|
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
|
Datasheet
|
FKH3018B
|
Overview
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKH3018B is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKH3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKH3018B
N-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS 30V
RDSON 2mΩ
ID 205A
TO263 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter Drain-Source...
Similar Datasheet