FETek Technology Corp.
 Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKCC8233 Dual N-Ch Fast Switching MOSFETs Product Summary BVDSS 20V RDSON 7.
2mΩ ID 11A General Description DFN2x3 Pin Configuration The FKCC8233 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The FKCC8233 meet the RoHS and Green Product requirement with full function reliability approved.
Pin1 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Dra...

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