RU30J30M2 Dual N-Channel Advanced Power MOSFET Features • 30V/30A, RDS (ON) =7mΩ(Typ.
)@VGS=10V RDS (ON) =10mΩ(Typ.
)@VGS=4.
5V • Fast Switching Speed • Low gate Charge • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching Application Systems • DC/DC Converters Pin Description G2S2 S2 S2 G1D1D1D1 PDFN5*6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Curr...

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