STD96N3LLH6 N-channel 30 V, 0.
0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET Features Type STD96N3LLH6 VDSS 30 V RDS(on) max 0.
0042 Ω ID 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications – Automotive Description This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
3 1 DPAK Figure 1.
Internal schematic diagram D (TAB or 2) G(1) Table 1.
Device summary Order codes STD96N3LLH6 Mar...

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