Taiwan Goodark Technology Co.
,Ltd TGD40H12K TGD N-Channel Enhancement Mode Power MOSFET Description The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =40V,ID =120A RDS(ON) 4.
0mΩ @ VGS=10V RDS(ON) 7mΩ @ VGS=4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible ...

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