Part Number
|
E4N60 |
Manufacturer
|
ROUM |
Description
|
4A 600V N-channel Enhancement Mode Power MOSFET |
Published
|
Jan 16, 2019 |
Detailed Description
|
4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanc...
|
Datasheet
|
E4N60
|
Overview
4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Which accords with the RoHS standard.
VDSS = 600V RDS(on) (TYP)= 2.
1Ω
ID = 4A
2 Features
● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤2.
5Ω) ● Low Gate Charge(Typical Data:14.
5nC) ● Low Reverse Transfer Capacitances(Typical:4pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test
TO-220C TO-220F TO-262
3 Applications
● used in various power switching circuit for system miniaturizat...
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