STL50DN6F7 Dual N-channel 60 V, 9 mΩ typ.
, 57 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL50DN6F7 VDS 60 V RDS(on) max.
11 mΩ ID 57 A  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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