Part Number
|
GF100N30 |
Manufacturer
|
STMicroelectronics |
Description
|
IGBT |
Published
|
Jan 21, 2019 |
Detailed Description
|
STGF100N30 STGP100N30, STGW100N30
90 A - 330 V - fast IGBT
Features
■ Optimized for sustain and energy recovery circu...
|
Datasheet
|
GF100N30
|
Overview
STGF100N30 STGP100N30, STGW100N30
90 A - 330 V - fast IGBT
Features
■ Optimized for sustain and energy recovery circuits in PDP applications.
■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @
TC = 25 °C (see Table 2)
3 2 1
TO-220FP
3 2 1
TO-247
■ Very low-on voltage drop (VCE(sat)) and energy
per pulse for improved panel efficiency
)■ High repetitive peak current capability ct(sDescription duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets.
3 2 1
TO-220
Figure 1.
Internal schematic diagram
lete Product(s) - ObsoleteTable 1.
Device summary soOrder codes
Ob STGF100N30
Marking...
Similar Datasheet