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Part Number
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STH410N4F7-2AG |
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Manufacturer
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STMicroelectronics |
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Description
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N-channel Power MOSFET |
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Published
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Jan 21, 2019 |
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Detailed Description
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STH410N4F7-2AG, STH410N4F7-6AG
Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7 Power MOSFETs in H²PAK-2...
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Datasheet
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STH410N4F7-2AG
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Overview
STH410N4F7-2AG, STH410N4F7-6AG
Automotive-grade N-channel 40 V, 0.
8 mΩ typ.
, 200 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STH410N4F7-2AG 40 V
STH410N4F7-6AG
RDS(on) max.
1.
1 mΩ
ID 200 A
PTOT 365 W
Designed for automotive applications and AEC-Q101 qualified
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstat...
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