STH272N6F7-6AG Automotive-grade N-channel 60 V, 0.
95 mΩ typ.
, 180 A STripFET™ F7 Power MOSFET in H²PAK-6 package Datasheet - production data TAB 7 1 H2PAK-6 Figure 1: Internal schematic diagram Features Order code STH272N6F7-6AG VDS 60 V RDS(on) max.
1.
5 mΩ ID 180 A  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing interna...

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