STP170N8F7 N-channel 80 V, 0.
003 Ω typ.
, 120 A, STripFET™ F7 Power MOSFET in TO-220 package Datasheet — production data Features TAB 3 2 1 TO-220 Figure 1.
Internal schematic diagram '7$% * Order code VDS RDS(on) max.
ID PTOT STP170N8F7 80 V 0.
0039 Ω 120 A 250 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient sw...

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