STD110N8F6 N-channel 80 V, 0.
0056 Ω typ.
,80 A, STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT 7$% STD110N8F6 80 V 0.
0065 Ω 80 A 167 W   '3$.
Figure 1.
Internal schematic diagram '7$% * • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
6 Order code STD110N8F6 $0Y Table 1.
Device summary Marking Package 110N8F...

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