Part Number
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STH240N10F7-6 |
Manufacturer
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STMicroelectronics |
Description
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N-CHANNEL POWER MOSFET |
Published
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Jan 22, 2019 |
Detailed Description
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STH240N10F7-2, STH240N10F7-6
Datasheet
N-channel 100 V, 2 mΩ typ., 180 A STripFET™ F7 Power MOSFETs in an H²PAK-2 and H²...
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Datasheet
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STH240N10F7-6
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Overview
STH240N10F7-2, STH240N10F7-6
Datasheet
N-channel 100 V, 2 mΩ typ.
, 180 A STripFET™ F7 Power MOSFETs in an H²PAK-2 and H²PAK-6 packages
TAB 23 1
H2 PAK-2
TAB
7 1 H2 PAK-6
Features
Order code
VDS
RDS(on) max.
STH240N10F7-2 STH240N10F7-6
100 V
2.
5 mΩ
• Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness
ID 180 A
D(TAB)
D(TAB) Description
G(1)
G(1)
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
S(2...
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