STF150N10F7 N-channel 100 V, 0.
0036 Ω typ.
, 65 A, STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet − production data Features 3 2 1 TO-220FP Order code VDS RDS(on)max ID PTOT STF150N10F7 100 V 0.
0042 Ω 65 A 35 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1.
Internal schematic diagram ' * Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)