Part Number
|
STD30N10F7 |
Manufacturer
|
STMicroelectronics |
Description
|
N-CHANNEL POWER MOSFET |
Published
|
Jan 22, 2019 |
Detailed Description
|
STD30N10F7
N-channel 100 V, 0.02 Ω typ., 32 A, STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
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|
Datasheet
|
STD30N10F7
|
Overview
STD30N10F7
N-channel 100 V, 0.
02 Ω typ.
, 32 A, STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram D(2, TAB)
G(1) S(3)
Features
Order code STD30N10F7
VDS 100 V
RDS(on) max.
0.
024 Ω
ID 32 A
PTOT 50 W
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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