STB14N80K5 N-channel 800 V, 0.
400 Ω typ.
, 12 A MDmesh™ K5 Power MOSFET in a D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features Order code STB14N80K5 VDS 800 V RDS(on) max.
0.
445 Ω ID 12 A  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power ...

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