STT3P2UH7 P-channel 20 V, 0.
087 Ω typ.
, 3 A STripFET™ H7 Power MOSFET in a SOT23-6L package Datasheet - production data SOT23-6L Figure 1: Internal schematic diagram Features Order code STT3P2UH7 VDS 20 V RDS(on) max 0.
1 Ω @ 4.
5 ID 3A  Very low on-resistance  Very low capacitance and gate charge  High avalanche ruggedness Applications  Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance.
The device also offers ultra-low capacitances for higher switching frequency operations.
Order code STT3P2UH7 Table 1: Device summary Marking Package 3L2U SOT23-6L Packaging ...

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