FQB200N04

FQB200N04 N-Channel Enhancement Mode Power MOSFET Description The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 40V,ID =200A RDS(ON) 2.6mΩ @ VGS=10V (Typ:2.0mΩ) ● Special process technology for high ESD capability ● High ...