FQD15N10 100V N-Channel MOSFET General Description Product Summary The FQP15N10 & FQPF15N10 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 100V 15A 80mΩ 75m Ω D G FQP15N10 FQPF15N10 Absolute Maximum Ratings TA=25°C unless otherw...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)