AO5600E Complementary Enhancement Mode Field Effect
Transistor
General Description
The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
AO5600E and AO5600EL are electrically identical.
-RoHS compliant -AO5600EL is Halogen Free
ESD PROTECTED!
Features
n-channel VDS (V) = 20V, ID = 0.
6A (VGS=4.
5V) RDS(ON) 0.
65Ω (VGS= 4.
5V) RDS(ON) 0.
75Ω (VGS= 2.
5V) RDS(ON) 0.
95Ω (VGS= 1.
8V) p-channel VDS (V) = -20V, ID = -0.
5A (VGS=-4.
5V) RDS(ON) 0.
8Ω (VGS= -4.
5V) RDS(ON) 1.
0Ω (VGS= -2.
5V) RDS(ON) 1.
3Ω (VGS= -1.
8V)
S1 G1
D2
SC-89-6
D1 G2 S2
D1 1
G1 G2 S1
Absolute M...