2SD1126(K)
Silicon
NPN Triple Diffused
Application
Power switching
Outline
TO-220AB
1 23
1.
Base 2.
Collector
(Flange) 3.
Emitter
2 1
1.
5 kΩ (Typ)
130 Ω (Typ)
3
ID
2SD1126(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * 1 Tj Tstg ID
Ratings 120 120 7 10 15 50 150 –55 to +150 10
Unit V V V A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO v...