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V15PN50-M3
Vishay General Semiconductor
High Current Density Surface Mount TMBS® (Trench MOS Barrier
Schottky) Rectifier
Ultra Low VF = 0.
26 V at IF = 5 A
eSMP® Series
K
1 2
SMPC (TO-277A)
K Cathode
Anode 1 Anode 2
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package
15 A 50 V 200 A 0.
41 V 150 °C SMPC (TO-277A)
Circuit configuration
Single
FEATURES • Very low profile - typical height of 1.
1 mm • Ideal for automated placement • Trench MOS
Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak...