Light Reflection Emitter / Sensor Array
Optoelectronic Products
4-8
FPA103,FPA104 FPA105,FPA106 FPA107,FPA108
General Description The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon
npn photo
transistor.
The axial radiant intensity of the diode and the axial response o.
f the phOto
transistor are perpendicular to the face of the device; therefore, the photo
transistorresponds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the photo
transistor.
The diode used in theFPA 103/104/105/106/1071 108 is similar to Fairchild's FPE104 GaAs infraredemitting diode.
I.
t emits an intense, narrow band of radiation, pe...