SJMN3 8 0 R6 5 D Super Junction MOSFET N-Channel Super Junction MOSFET Fe at ur e s  Drain-Source voltage: VDS=700V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.
38Ω (Max.
)  Ultra low gate charge: Qg=20nC(Typ.
)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN3 8 0 R6 5 D SJMN3 8 0 R6 5 TO- 2 5 2 D G S TO-252 Marking Information SJMN 3 8 0 R6 5 YWWN Column 1, 2: Device Code Column 3: Production Information e.
g.
) YWWN -.
YWW: Date Code (year, week) -.
N: Management Code Absolut e maximum rat ings (TC=25C unless otherwise noted) Charact e r ist ic Symbol Drain-source voltage VDSS Gate-source voltage VGSS ...

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