SJMN05S60FD

SJMN05S60FD Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.7Ω (Typ.)  Ultra low gate charge: Qg=7nC(Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN05S60FD SJMN05S60 TO-220F-3L GDS TO-2...