Part Number
|
Si4410DY |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Feb 7, 2019 |
Detailed Description
|
PD - 91853C
Si4410DY
l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive
S S ...
|
Datasheet
|
Si4410DY
|
Overview
PD - 91853C
Si4410DY
l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive
S S S G
Description
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology.
The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
HEXFET® Power MOSFET
AA
1
8D
VDSS = 30V
2 7D
3 6D
4 5 D RDS(on) = 0.
0135Ω
Top View
SO-8
Absolute Maximum Rat...
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