CEC6072
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
60V, 54A, RDS(ON) = 9mΩ @VGS = 10V.
RDS(ON) = 13mΩ @VGS = 5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
RoHS compliant.
D
G S
56 78 Bottom View
DFN3*3
43 21
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous@RθJc
@RθJA Drain Current-Pulsed a@RθJc
ID 54 ID 13 IDM 216
@RθJA
IDM 52
Maximum Power Dissipation
PD 41.
7
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junct...