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FIELD EFFECT POWER
TRANSISTOR
IRF230,231 D86DN2,M2
9.
0 AMPERES 200,150 VOLTS
ROS(ON} = 0.
4 n
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability,
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features
• Polysilicon gate - Improved stability and reliability
•...