~D~[P~
FIELD EFFECT POWER
TRANSISTOR
IRF820,821 D84CR2,R1
2.
5 AMPERES 500, 450 VOLTS
ROS(ON) =3.
0 il
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features
• Polysilicon gate - Improved stability and reliability
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