~D~[P~U
FIELD EFFECT POVVER
TRANSISTOR
IRFF220,221
3.
5 AMPERES 200, 150 VOLTS
ROS(ON) =0.
8 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applica~ions such as audio amplifiers and servo motors.
Features
• Polysilicon gate - Improved stability and reliabil...