mTMlJ~~~
Insulated Gate Bipolar
Transistor
IGT6D21,E21
20 AMPERES 400, 500 VOLTS EQUIV.
ROS(ON) = 0.
145 0
This IGT'-
Transistor (Insulated Gate Bipolar
Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar
transistors.
The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar
transistors.
The device design and gate characteristics ofthe IGT'-
Transistor are also similar to power MOSFETS.
An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on.
The much lower ...