mTM1J~~~
Insulated Gate Bipolar
Transistor
20AMPEFlES 400, 500 VOLTS
EQUIV.
RDS(ON) =0.
145 n.
This IG"f"I
Transistor (Insulated Gate Bipolar
Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar
transistors.
The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similarto bipolar
transistors.
The device design and gate characteristics ofthe IGT'II
Transistor are also similar to power MOSFETS.
An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on.
The much lower on-state vo...