GB50SLT12-247
1200 V SiC MPS™ Diode
Silicon Carbide
Schottky Diode
Features
• High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds
Package
VRRM IF (Tc = 135°C) QC
= 1200 V = 103 A = 199 nC
2
1 TO-247-2L
Advantages
• Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse...