GC2X10MPS12-247
1200 V SiC MPS™ Diode
Silicon Carbide
Schottky Diode
Features
High Avalanche (UIS) Capability Enhanced Surge Current Capability Superior Figure of Merit QC/IF Low Thermal Resistance 175 °C Maximum Operating Temperature Temperature Independent Switching Behavior Positive Temperature Coefficient of VF Extremely Fast Switching Speeds
Package
Case
A A
K TO-247-3
VRRM IF (Tc = 135°C) QC
= 1200 V = 48 A* = 80 nC*
Case
A KA
Advantages
Low Standby Power Losses Improved Circuit Efficiency (Lower Overall Cost) Low Switching Losses Ease of Paralleling without Thermal Runaway Smaller Heat Sink Requirements Low Reverse Recovery Current Low Device Capac...