PBSS4612PA
12 V, 6 A
NPN low VCEsat (BISS)
transistor
Rev.
01 — 7 May 2010
Product data sheet
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Product profile
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1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
PNP complement: PBSS5612PA.
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2 Features and benefits
Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capabi...