PBSS4021NT
20 V, 4.
3 A
NPN low VCEsat (BISS)
transistor
Rev.
01 — 31 January 2010
Product data sheet
1.
Product profile
1.
1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4021PT.
1.
2 Features
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
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3 Applications
Loadswitch Battery-driven devices Power ma...