PBSS4160QA
60 V, 1 A
NPN low VCEsat (BISS)
transistor
23 August 2013
Product data sheet
1.
General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP complement: PBSS5160QA.
2.
Features and benefits
• Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High energy efficiency due to less heat generation • Reduced Printed-Circuit Board (PCB) area requirements • Solderable side pads • AEC-Q101 qualified
3.
Applications
• Loadswitch • Battery-...