High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS
Transistor
IXBT12N300 IXBH12N300
VCES = IC110 = VCE(sat) ≤
3000V 12A 3.
2V
Symbol
VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA)
PC TJ TJM Tstg TTLSOLD Md Weight
Test Conditions
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
Transient
TC = 25°C
TTCC
= 110°C = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 30Ω Clamped Inductive Load
TC = 25°C
1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268 TO-247
Maximum Ratings
3000 3000
V V
± 20 V ± 30 V
30 A 12 A 100 A
ICM = 98 1500
A V
160 W
-55 .
.
.
+150 150
-55 .
.
.
+150
°C °C °C
300 °C 260 °C
1.
13/10
Nm/lb.
in.
4g 6g
Sym...