1N4454

1N4450 : 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te Electrical Characteristics Type Peak reverse voltage VRM V 1N914 1N4149 1) Max. aver. rectified current IO mA 75 150 200 150 150 150 2) Max. power dissip. at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400 .

1N4450 : 1N4450 FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Certificate TH97/10561QM Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics ( Ta = 25 °C) Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Forward DC Current Maximum Average Forward Current Maximum Surge Forward Current at tp = 1 µs Power Dissipation Maximum Junction T.

1N4450 : 1N4450 High-reliability discrete products and engineering services since 1977 SWITCHING RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Maximum peak reverse voltage Maximum reverse voltage Maximum forward DC current Maximum average forward current Maximum surge forward current @ tp = 1µs Power dissipation Maximum junction temperature Storage temperature range Symbol VRM VR IF IF(AV) IFSM PD TJ Tstg Value 40 30 250 200 4 500 200 -65 to +200 Unit V V mA mA A mW °C °C ELECTRICAL CHARACTERIST.

1N4451 : 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te Electrical Characteristics Type Peak reverse voltage VRM V 1N914 1N4149 1) Max. aver. rectified current IO mA 75 150 200 150 150 150 2) Max. power dissip. at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400 .

1N4453 : 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te Electrical Characteristics Type Peak reverse voltage VRM V 1N914 1N4149 1) Max. aver. rectified current IO mA 75 150 200 150 150 150 2) Max. power dissip. at 25 Ptot mW 500 500 500 400 400 500 500 500 400 400 400 400 .

1N4453 : 1N4156, 1N4157, 1N4453, 1N4829, 1N4830, 1N5179, MPD100-MPD400A High-reliability discrete products and engineering services since 1977 TIGHT TOLERANCE STABISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Power Rating: Power Derating: Junction & Storage Temperatures: 500 mW 4.0 mW/°C above 50°C -65°C to 175°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Type Maximum Reverse Current IR 25°C nA 1N4156 50 1N4157 50 1N4453 50 1N4829 100 1N4830 100 1N5179 50 MPD100 30 M.

1N4454 : 1N4454 High Conductance Ultra Fast Diode Features: D DO−35 Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Working Inverse Voltage, WIV . . 50V Total DDeveircaeteDaisbsoipveati+o2n5, PCD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW 3.33mW/C Average Rectified Current, DC Forward Current, IF . . .IO. . . . . . . . . . . . .

1N4454 : 1N4454 SILICON SWITCHING DIODE Features · · · · High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version (LL4454) A B A D C Mechanical Data · · · · · Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.13 grams (approx.) DO-35 Dim A B C D Min 25.40 ¾ ¾ ¾ Max ¾ 4.00 0.60 2.00 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol VRRM VRWM VR IFM IO IFSM Pd RqJA Tj, TSTG 1N4454 75 300 150 1.0 2.0 400 300 -65 to +175 Unit V mA mA A mW K/W °C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage.

1N4454 : AXIAL LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any pro.

1N4454 : RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4454 1N4454 SIGNAL DIODE Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 400 mW 3.33mW/°C (25°C) Forward Current IF 225 mA Junction Temp. Storage Temp. Tj -65 to 175 °C Tstg -65 to 175 °C Mechanical Data Items Materials Package DO-35 Case Hermetically sealed glass Lead/Finish Double stud/Solder Plating Chip Glass Passivated Dimensions (DO-35) DO-35 26 MIN 0.457 0.559 DIA. 4.2 max. 26 MIN 2.0 max. DIA. Dimensions in millimeters Electrical Characteristics (Ta=25°C) Ratings Minimum Breakdown Voltage IR= 5.0uA IR= 100uA Pea.

1N4454 : • 1N4454 and IN4454-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -55°C to +175°C Storage Temperature: -55°C to +175°C Operating Current: 200 mA @ TA = +25°C Derating Factor: 1.33 mA/°C Above TA = + 25°C Surge Current A: 1A (pk), Pw = 1 sec Surge Current B: 4A (pk), Pw = 1 µs ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. VBR @5µA Volts 75 V RWM Volts (pk) 50 Vf 1 Vf 2 t rr I0 @I F = 10 mA @I F = 10 mA TA = 150°C mA V dc V dc n sec 200 1.0 0.7 4 I R1 @ 50 V dc µA 0.1 I R2 @ 50 V TA = 150°C µA 100 CAPACITANCE @0V pF.

1N4454 : Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .

1N4454 : 1N4305, 1N4454 High-reliability discrete products and engineering services since 1977 SWITCHING RECTFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Maximum working inverse voltage Average rectified current Forward current steady state Recurrent peak forward current Peak forward surge current Pulse width = 1.0s Pulse width = 1.0µs Power dissipation Maximum total dissipation Linear derating factor (from 25°C) Storage temperature range Maximum junction temperature Lead temperature Symbol WIV IO IF .

1N4454 : Small-Signal Diode DO-204AH (DO-35 Glass) 1N4454 Vishay Semiconductors formerly General Semiconductor Reverse Voltage 100V Forward Current 150mA Dimensions in inches and (millimeters) Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: F2/10K per Ammo tape (52mm), 50K/box F3/10K per 13” reel (52mm tape), 50K/box Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Reverse voltage VR 75 Peak reverse voltage VRM 100 Maximum average rectified current half wave rectification with resistive load at Tamb = 25°C and f ≥ 50Hz(1) IF(AV) 150.

1N4454 : 1N4454 FEATURES : • High switching speed: max. 4 ns • General application • Continuous reverse voltage:max. 75 V • peak reverse voltage:max. 100 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol Maximum Reverse Voltage Maximum Peak Reverse Voltage Maximum Continuous Forward Current Maximum Average Forward Current, Half wave Rectification wit.

1N4454 : 1N4454 & 1N4454-1 Silicon Switching Diode Features  Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/144  Metallurgically Bonded  Hermetically Sealed  Double Plug Construction Maximum Ratings Operating & Storage Temperature: -55°C to +175°C Operating Current: 200 mA @ TA = +75°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0 Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) VBR @ 5 μA Volts VRWM Volts (pk) I0 VF1 @ IF = 10 mA VF2 @ IF = 10 mA TA = 150°C mA V dc V dc trr n sec IR1 @ 50 V IR2 @ 50 V Capacitance dc TA = 150°C @ 0 V μA μA pF 75 50 200 0.8 0.7.