PJM250N40TO N- Enhancement Mode Field Effect
Transistor
Features
⚫ High density cell design for ultra low RDS(on) ⚫ Low RDS(ON) and Gate Charge ⚫ Excellent package for good heat dissipation
Applications
⚫ Power switching application ⚫ Hard switched and high frequency circuits ⚫ Uninterruptible power supply
TO-220
1
2 3
Schematic Diagram
Drain 2
1 Gate
3 Source
Absolute Maximum Ratings
Ratings at TC =25℃ unless otherwise specified.
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Note1 Single Pulse Avalanche Energy Power Dissipation Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Case Note2
Sy...