Descriptions  Fast Switching  Low RDS(ON) and Gate Charge  Low Reverse Transfer Capacitance  100% Single Pluse Avanlanche Energy Test Features  VDS = 800V, ID = 4A  RDS(ON) ＜ 3.
6 Ω (@VGS=10V)  ESD Protected ＞ 4kV (HBM)  MSL: 1 Level Applications  Power Switch  Adaptor, Charger Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified.
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TC=25°C TC=100°C Single Pulse Avalanche Energy 2 Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG...

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