Part Number
|
IXTN200N10T |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Feb 25, 2019 |
Detailed Description
|
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTN200N10T
VDSS...
|
Datasheet
|
IXTN200N10T
|
Overview
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTN200N10T
VDSS = 100V
ID25
RDS(on)
= ≤
200A 5.
5mΩ
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.
6mm (0.
062 in.
) from case for 10s
50/60 Hz, RMS IISOL ≤ 1mA
Mounting torque Terminal connection torque
t = 1min t = 1s
Maximum Ratings 100 100
V V
±20 V ± 30 V
200 A 100 A 500 A
40 A 1.
5 J
550 W
-55 .
.
.
+175 175
-55 .
.
.
+175
°C °C °C
300 °C
2500 3000
...
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