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Part Number
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HY2N7002E |
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Manufacturer
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HUAYI |
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Description
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N-Channel Enhancement Mode MOSFET |
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Published
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Feb 25, 2019 |
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Detailed Description
|
HY2N7002E
N-Channel Enhancement Mode MOSFET
Feature
60V/200mA RDS(ON)= 2.4Ω(typ.) @ VGS = 10V RDS(ON)= 3.0Ω(typ.) @ ...
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Datasheet
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HY2N7002E
|
Overview
HY2N7002E
N-Channel Enhancement Mode MOSFET
Feature
60V/200mA RDS(ON)= 2.
4Ω(typ.
) @ VGS = 10V RDS(ON)= 3.
0Ω(typ.
) @ VGS = 5V RDS(ON)= 3.
1Ω(typ.
) @ VGS = 4.
5V
Avalanche Rated Lead Free Devices Available Reliable and Rugged ESD Protected HBM：＞1KV
Applications
Networking Switching application Hand-held Instruments
Ordering and Marking Information
Pin Description
D
S G SOT-23-3L
N-Channel MOSFET
Product type XX
Date Code WW
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for M...
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