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Part Number
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HY025N08B6 |
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Manufacturer
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HUAYI |
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Description
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N-Channel Enhancement Mode MOSFET |
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Published
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Feb 25, 2019 |
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Detailed Description
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HY025N08B6
N-Channel Enhancement Mode MOSFET
Feature
80V/310A RDS(ON)= 2mΩ(typ.)@VGS = 10V
100% Avalanche Tested ...
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Datasheet
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HY025N08B6
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Overview
HY025N08B6
N-Channel Enhancement Mode MOSFET
Feature
80V/310A RDS(ON)= 2mΩ(typ.
)@VGS = 10V
100% Avalanche Tested Reliable and Rugged Halogen- Free and Green Devices Available
(RoHS Compliant)
Applications
Brushless Motor Drive Switching application Electric Power Steering
Ordering and Marking Information
Pin Description
Pin7 Pin1 TO-263-6L Pin4
Pin1 Pin2,3,5,6,7
N-Channel MOSFET
B6
HY025N08
YYXXXJWW G
Package Code B6:TO-263-6L
Date Code YYXXX WW
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of I...
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