YJH03N10A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect
Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.
5V)
100V
3A ＜110 mohm ＜120 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage Drain Current Pulsed Drain Current A
TA=25℃ TA=70℃
Total Power Dissipation
TA=25℃ TC=25℃
Thermal Resistance Junction-to-Ambient B
Thermal Resistance Junction-to-Case
Junction ...