PBSM5240PFH
40 V, 2 A
PNP low VCEsat (BISS)
transistor with N-channel Trench MOSFET
Rev.
1 — 20 June 2012
Product data sheet
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Product profile
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1 General description
Combination of
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect
Transistor (MOSFET).
The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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2 Features and benefits
Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventiona...