PHPT60603PY
60 V, 3 A
PNP high power bipolar
transistor
13 January 2014
Product data sheet
1.
General description
PNP high power bipolar
transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT60603NY.
2.
Features and benefits
• High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-Circuit Board (PCB) requirements comparing to
transistors in DPAK • High energy efficiency due to less heat generation • AEC-Q101 qualified
3.
Applications
• Power management • Load switch • Linear mode voltage
regulator • Backlighting applications
4.
Quick reference data
Table 1.
Symbol VCEO
IC I...