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IGW30N60F

Part Number IGW30N60F
Manufacturer IPS
Description MOSFET
Published Mar 4, 2019
Detailed Description IGW30N60F General Description: Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching ...
Datasheet IGW30N60F




Overview
IGW30N60F General Description: Using advanced IGBT technology, the 600V IGBT.
Offers superior conduction and switching performances.
Lead Free Package and Finish VCES 600V VCE(sat) 2.
0V IC 30A Features: ●Low saturation voltage: VCE(sat),typ=2.
0V @IC=30A,VGE=15V; ●RoHS Compliant; Applications: ● Inverter welder ● Solar inverters ● UPS ● High switching frequency inverter Ordering Information Part Number Package IGW30N60F TO-3P Brand IPS Absolute Maximum Ratings(Ta= 25℃,unless otherwise specified) Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 VGES Gate- Emitter Voltage ±20 IC ICMa1 IF Collector Current Collector Current @TC=100℃ Pulsed Collector Cur...






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