Part Number
|
12N60F |
Manufacturer
|
GFD |
Description
|
600V N-Channel MOSFET |
Published
|
Mar 12, 2019 |
Detailed Description
|
600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology.Thi...
|
Datasheet
|
12N60F
|
Overview
600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology.
This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
12N60/12N60F
VDSS RDS(ON)
ID
600V 0.
65Ω
12A
Features
•12A, 600V, RDS(on) = 0.
65Ω @VGS = 10 V • Low gate charge ( typical 52nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE ...
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